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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-3PN package *Complement to type BDW83/83A/83B/83C/83D *DARLINGTON *High DC current gain APPLICATIONS *For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW84/84A/84B/84C/84D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW84 BDW84A VCBO Collector-base voltage BDW84B BDW84C BDW84D BDW84 BDW84A VCEO Collector-emitter voltage BDW84B BDW84C BDW84D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 BDW84A ICBO Collector cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A ICEO Collector cut-off current BDW84B BDW84C BDW84D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=-6A ,IB=-12mA IC=-30mA, IB=0 SYMBOL BDW84/84A/84B/84C/84D CONDITIONS MIN -45 -60 -80 -100 -120 TYP. MAX UNIT V -2.5 -4.0 -2.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V IC=-15A ,IB=-150mA IC=-6A ; VCE=-3V VCB=-45V, IE=0 TC=150 VCB=-60V, IE=0 TC=150 VCB=-80V, IE=0 TC=150 VCB=-100V, IE=0 TC=150 VCB=-120V, IE=0 TC=150 VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-6A ; VCE=-3V IC=-15A ; VCE=-3V IE=-15A IC =-10 A, IB1 =-IB2=-40 mA RL=3B; VBE(off) =4.2V Duty CycleC2% 0.9 7.0 750 100 mA -1 mA -2 20000 mA -3.5 V As As THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 0.83 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDW84/84A/84B/84C/84D Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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